Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering

被引：0

作者：

Sritirawisarn, Nut ^{[1
]}

van Otten, Frank W. M. ^{[1
]}

Eijkemans, Tom J. ^{[1
]}

Notzel, Richard ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst Commun Technol, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; GAAS(100); ISLANDS; SURFACES;

D O I：

10.1002/pssb.200880650

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have previously demonstrated the formation of linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP(100) by chemical beam epitaxy (CBE). The important step forward is the vertical stacking of the QD arrays with identical emission wavelength, realizing a three-dimensionally self-ordered QD crystal. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：858 / 860

页数：3

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