A new epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

被引:11
作者
Mukaida, M [1 ]
Takano, Y [1 ]
Chiba, K [1 ]
Moriya, T [1 ]
Kusunoki, M [1 ]
Ohshima, S [1 ]
机构
[1] Yamagata Univ, Yonezawa, Yamagata 9928510, Japan
关键词
D O I
10.1088/0953-2048/12/11/359
中图分类号
O59 [应用物理学];
学科分类号
摘要
45 degrees grain boundaries, which drastically increase surface resistance (R-S) in superconducting YBa2Cu3O7-delta films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-delta films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-delta and MgO are confirmed by x-ray phi-scanning. The Rs values of the YBa2Cu3O7-delta films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-delta films grown on BaSnO3 buffered MgO substrates show lower R-S than YBa2Cu3O7-delta films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-delta films to grow without 45 degrees grain boundaries at a optimum film growth condition is attractive for microwave applications.
引用
收藏
页码:890 / 892
页数:3
相关论文
共 5 条
[1]  
CHALOUPKA H, 1990, FREQUENZ, V443, P141
[2]   RESISTIVE LOSS AT 10 GHZ IN C-AXIS-ALIGNED INSITU-GROWN YBA2CU3O7 FILMS [J].
LADERMAN, SS ;
TABER, RC ;
JACOWITZ, RD ;
MOLL, JL ;
EOM, CB ;
HYLTON, TL ;
MARSHALL, AF ;
GEBALLE, TH ;
BEASLEY, MR .
PHYSICAL REVIEW B, 1991, 43 (04) :2922-2933
[3]   ANNEALING TEMPERATURE-DEPENDENCE OF MGO SUBSTRATES ON THE QUALITY OF YBA2CU3OX FILMS PREPARED BY PULSED-LASER ABLATION [J].
MINAMIKAWA, T ;
SUZUKI, T ;
YONEZAWA, Y ;
SEGAWA, K ;
MORIMOTO, A ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A) :4038-4042
[4]   NATURE OF PREFERRED ORIENTATION OF YBA2CU3OX THIN-FILMS [J].
MUKAIDA, M ;
MIYAZAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (10) :4521-4528
[5]  
SUZUKI M, 1993, ADV SUPERCONDUCTIVIT, V3, P969