Single transistor fractional-order filter using a multi-walled carbon nanotube device

被引：4

作者：

Bertsias, Panagiotis ^{[1
]}

Psychalinos, Costas ^{[1
]}

Elwakil, Ahmed S. ^{[2
,3
,4
]}

Biswas, Karabi ^{[5
]}

机构：

[1] Univ Patras, Dept Phys, Elect Lab, Patras 26504, Greece

[2] Univ Sharjah, Dept Elect & Comp Engn, POB 27272, Sharjah, U Arab Emirates

[3] Nile Univ, NISC, Giza, Egypt

[4] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB, Canada

[5] Indian Inst Technol Kharagpur, Dept Elect Engn, Kharagpur, W Bengal, India

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2019年 / 100卷 / 01期

关键词：

Fractional-order filters; Fractional-order capacitors; MOS only filters; Analog filters;

D O I：

10.1007/s10470-019-01463-5

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A low-pass fractional-order filter topology based on a single metal oxide semiconductor transistor is presented in this Letter. The filter is realized using a fractional-order capacitor fabricated using multi-walled carbon nanotubes. The electronic tuning capability of the filter's frequency characteristics is achieved through a biasing current source. Experimental results are presented and compared with the theory.

引用

页码：215 / 219

页数：5