Dual-channel charge transfer-based thermally activated delayed fluorescence emitter facilitating efficient and low roll-off non-doped devices

被引:14
|
作者
Li, Hao-Ze [1 ]
Xie, Feng-Ming [2 ]
Zhang, Kai [3 ]
Shen, Yang [2 ]
Zhou, Wei [2 ]
Li, Yan-Qing [1 ]
Wang, Wen-Jun [4 ]
Tang, Jian-Xin [2 ,3 ]
机构
[1] East China Normal Univ, Sch Phys & Elect Sci, Minist Educ, Nanophoton & Adv Instrument Engn Res Ctr, Shanghai 200062, Peoples R China
[2] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[3] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, Taipa 999078, Macao, Peoples R China
[4] Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Prov Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermally activated delayed fluorescence; Organic light-emitting diode; Space charge transfer; Through-bond charge transfer; Solution-process; AGGREGATION-INDUCED EMISSION; QUANTUM EFFICIENCY; BLUE; DIODES; OLEDS; PERFORMANCE; POLYMER;
D O I
10.1016/j.cej.2022.135234
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The development of thermally activated delayed fluorescence (TADF) emitters with fast reverse intersystem crossing rate (RISC) remains huge challenge. In this work, donor-acceptor-type TADF material SFO-SPAC is designed and synthesized, which contains methyl and F-atom shells along with dual-spiral segments. The SFO-SPAC emitter features through-bond and through-space charge transfer due to the distorted donor-acceptor structures and the induced effects of F-atoms. The neat film of SFO-SPAC exhibits a photoluminescence quantum yield of 96%, a fast RISC rate of 1.04 x 10(6) s(-1), and a fast radiative decay rate of 1.90 x 10(7) s(-1). Consequently, the evaporation-processed non-doped green organic light emitting diode (OLED) achieves a maximum external quantum efficiency (EQE) of 23.5% and low efficiency roll-off with an EQE of 20.1% at 5000 cd m(-2). In addition, the solution-processed non-doped device shows high EQE up to 22.3%.
引用
收藏
页数:7
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