Electrical spin injection from ZnMnSe into InGaAs-based quantum structures

被引：2
作者：
Loeffler, W.
Troendle, D.
Kalt, H.
Litvinov, D.
Gerthsen, D.
Lupaca-Schomber, J.
Passow, T.
Daniel, B.
Kvietkova, J.
Hetterich, M.
机构：
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
[3] Univ Karlsruhe, DFG Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期
关键词：
spintronics; spin injection; hybrid structures; magnetic semiconductor; quantum dots;
D O I：
10.1016/j.physe.2005.12.121
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on electrical spin injection into InGaAs-based nanostructures through a semi-magnetic ZnMnSe layer in a magnetic field. We show an optical polarization degree of the electro-luminescence of up to 35% in InGaAs quantum wells and up to 14% in InGaAs quantum dots. To be able to attribute the polarization of the emitted photons to the spin alignment in the semi-magnetic layer, we have fabricated reference devices and performed all-optical measurements. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：434 / 437
页数：4
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