High-Performance InGaZnO-Based ReRAMs

被引：23

作者：

Ma, Pengfei ^{[1
]}

Liang, Guangda ^{[1
]}

Wang, Yiming ^{[1
]}

Li, Yunpeng ^{[1
]}

Xin, Qian ^{[1
]}

Li, Yuxiang ^{[1
]}

Song, Aimin ^{[1
,2
]}

机构：

[1] Shandong Univ, Ctr Nanoelect, Sch Microelect, Jinan 250100, Shandong, Peoples R China

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 06期

基金：

英国工程与自然科学研究理事会; 中国国家自然科学基金; 中国博士后科学基金;

关键词：

Electrode; indium-gallium-zinc oxide (IGZO); memory window; oxygen plasma; resistive random access memories (ReRAMs); retention time; RESISTIVE SWITCHING BEHAVIOR; THIN-FILM TRANSISTORS; MEMORY; MECHANISMS;

D O I：

10.1109/TED.2019.2912483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising oxide semiconductors for thin-film transistors and it has started to replace amorphous silicon in display drivers. However, attempts to use IGZO in resistive random access memories (ReRAMs) are still scarce. This work investigates the bipolar resistive switching properties of crossbar-ReRAM devices based on IGZO thin film. Aluminum bottom electrode and two different top electrodes (i.e., Al and Ag) were tested in the devices. It was discovered that an oxygen plasma treatment (OPT) on the bottom electrode could significantly improve the surface roughness of the bottom electrode, the ON/OFF ratio, and the switching uniformity. After the OPT, the endurance of ReRAMs was enhanced. The ON/OFF current ratios reached similar to 10(4) and 10(5) within 100 endurance cycles for Al and Ag top electrode devices, respectively. Furthermore, the ReRAMs memory window remained nearly constant during a retention test of 10(5) s. The conduction mechanisms of the two device structures were examined using Schottky emission and space-charge-limited-current pictures, and the memory effect was explained by the formation and the interruption of filaments.

引用

页码：2600 / 2605

页数：6

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