High-efficiency GaN-based Laser Diodes for Solid-state Lighting

被引：4

作者：

Saito, S. ^{[1
]}

Hattori, Y. ^{[1
]}

Sugai, M. ^{[1
]}

Harada, Y. ^{[1
]}

Jongil, H. ^{[1
]}

Nunoue, S. ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年

关键词：

D O I：

10.1109/ISLC.2008.4636071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based laser diodes (LDs) with a slope efficiency of 2.6 W/A are presented. The white light source was fabricated by using 405nm LDs and phosphors. The luminous flux was estimated to be 200 hn.

引用

页码：185 / 186

页数：2

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