A high productivity, low defectivity, develop process for 193nm lithography

被引：1

作者：

Mack, George ^{[1
]}

Consiglio, Steven ^{[1
]}

Bright, Jeffrey ^{[1
]}

Ueda, Kenichi ^{[2
]}

Winter, Tom ^{[2
]}

机构：

[1] IBM Corp, 2070 Route 52, Hopewell Jct, NY 12533 USA

[2] Tokyo Elect Amer Inc, Hopewell Jct, NY 12533 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2 | 2006年 / 6153卷

关键词：

develop process; CD control; defects;

D O I：

10.1117/12.656664

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Minimizing defectivity, improving critical dimension control and improving productivity continue to be key drivers for 300mm IC manufacturing. New and unique hardware and process solutions are required to meet both technology and production demands. IBM is evaluating a new and unique resist developer hardware process. The key elements of the new process are 1) the impact or contact of the developer is uniform on the resist surface, 2) defects due to slow dissolution and redepositon are reduced, 3) developer consumption is reduced up to 60% and 4) the process time is up to 40% shorter than common develop processes. This paper presents results of our evaluation of the new developer hardware and process, and demonstrates that this is a robust process exhibiting good CD control with low defectivity and high throughput.

引用

页码：U387 / U394

页数：8