SPICE-based approach for magnetic memory simulation

被引：0
|
作者：
Kostrov, Alexander
Stempitsky, Viktor
机构：
来源：
MEMSTECH: 2009 INTERNATIONAL CONFERENCE ON PERSPECTIVE TECHNOLOGIES AND METHODS IN MEMS DESIGN | 2009年
关键词：
MRAM; magnetic tunnel junction; macromodel; spintronics; Verilog-AMS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Original approach to MRAM I-V characteristics simulation by using SPICE-like simulator was presented. An electrical macromodel of MRAM cell based of spin dependent transport tunneling processes in ferromagnetic/insulator/semiconductor nanostructures accounting for defects in the insulator and at its interfaces was realized within Verilog-AMS computer language and used for simulation of the memory devices with CAD software.
引用
收藏
页码：44 / 45
页数：2
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