Selective etching of InP in NaF solution

被引：7

作者：

Weng, Zhankun ^{[1
]}

Zhang, Wendan ^{[2
]}

Wu, Cuiting ^{[3
]}

Cai, Hongxing ^{[2
]}

Li, Changli ^{[2
]}

Wang, Zuobin ^{[1
]}

Song, Zhengxun ^{[1
]}

Liu, Aimin ^{[4
]}

机构：

[1] Changchun Univ Sci & Technol, Ctr Nano Metrol & Mfg Technol, Changchun 130022, Jilin Province, Peoples R China

[2] Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Jilin Province, Peoples R China

[3] Beijing City Univ, Software Dept, Beijing 100093, Peoples R China

[4] Dalian Univ Sci & Technol, Sch Phys & Optoelect Technol, Dalian 160024, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Porosity; Semiconductors; Electrochemistry etching; POROUS INP; PHOTOLUMINESCENCE; FABRICATION; PORES;

D O I：

10.1016/j.apsusc.2009.09.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [0 (1) over bar 1], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1] B and [1 (1) over bar (1) over bar] B. Both are due to the selective etching of F ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III-V compound semiconductors for photonic band gap materials. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2052 / 2055

页数：4

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