Efficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithography

被引：17

作者：

Huang, Hung-Wen ^{[1
]}

Lai, C. F.

Wang, W. C.

Lu, T. C.

Kuo, H. C.

Wang, S. C.

Tsai, R. J.

Yu, C. C.

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Highlink Corp, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 02期

关键词：

D O I：

10.1149/1.2402489

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This study reports the development of GaN-based power-chip light-emitting diodes (LEDs) with sidewall roughness using natural lithography with polystyrene spheres as the etching mask. At an injection current of 350 mA, the LED with sidewall roughness increased the light output intensity of the InGaN/GaN multiple quantum well LEDs by a factor of 1.26, indicating that the LED with sidewall roughness had larger light extraction efficiency. The wall-plug efficiency of GaN-based LED was increased by 26.5% with sidewall roughness. After 1000 h life test, it was found that normalized output power of power-chip LED with sidewall roughness did not show any significant degradation. (c) 2006 The Electrochemical Society.

引用

页码：H59 / H62

页数：4

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