Dielectric and Impedance Analysis on the Electrical Response of Lead-Free Ba1-xCaxTi0.9Zr0.1O3 Ceramics at High Temperature Range

被引:19
作者
Reyes-Montero, Armando [1 ]
Ramos-Alvarez, Paola [1 ]
Gonzalez, Amador M. [2 ]
Lopez-Juarez, Rigoberto [3 ]
Elena Villafuerte-Castrejon, Maria [1 ]
机构
[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Circuito Exterior S-N,AP 70-360 CDMX, Mexico City 04510, DF, Mexico
[2] Univ Politecn Madrid, Grp POEMMA, ETSIS Telecomunicac, Campus Sur,Ctra Valencia Km 7, Madrid 28031, Spain
[3] Univ Nacl Autonoma Mexico, Unidad Morelia, Inst Invest Mat, Antigua Carretera Patzcuaro 8701, Morelia 58190, Michoacan, Mexico
来源
APPLIED SCIENCES-BASEL | 2017年 / 7卷 / 03期
关键词
BCTZ ceramics; dielectric response; impedance spectroscopy; BEHAVIOR;
D O I
10.3390/app7030214
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ba1-xCaxTi0.9Zr0.1O3 (x = 0.10, 0.15, 0.18) solid solutions were synthesized by the conventional solid-state method. A perovskite-type structure was determined using the X-ray diffraction (XRD) technique. The addition of Ca2+ reduced the grain size (22.6, 17.9 and 13.3 m, respectively) for all well-sintered ceramics (approximate to 98%). Moreover, the stability temperature ranges for the tetragonal phase were promoted by displacing the ferroelectric-ferroelectric phase's transition temperatures while T-C was maintained (86 degrees C). The electrical performance of the material improved as the stoichiometric composition was positioned near the morphotropic phase boundary (x = 0.15): epsilon(r) approximate to 16,500 (T-C) at 1 kHz. For T > T-C, a thermally activated relaxation process occurred. In addition, the bulk and grain boundary processes were responsible for the conduction mechanisms. The composition x = 0.15 showed an activation energy of Ea = 1.49 eV with a maximum conductivity of sigma(max) = 2.48 x 10(-2) Sm-1 at 580 degrees C. Systematic studies at high temperature for dielectric properties were accomplished for analyzing electrical inhomogeneities associated with the grain, grain boundaries or surfaces, which are important for device design and a fundamental electrical characterization.
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页数:10
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