460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing

被引：23

作者：

Chang, Chia-Ta ^{[1
]}

Hsiao, Shih-Kuang ^{[1
]}

Chang, Edward Yi ^{[1
]}

Hsiao, Yu-Lin ^{[1
]}

Huang, Jui-Chien ^{[1
]}

Lu, Chung-Yu ^{[1
]}

Chang, Huang-Choung ^{[2
]}

Cheng, Kai-Wen ^{[2
]}

Lee, Ching-Ting ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] ULVAC Res Ctr Inc, Hsinchu 300, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 19期

关键词：

Edge threading dislocations; light-emitting diodes (LEDs); patterned sapphire; submicrometer; NEAR-ULTRAVIOLET; GAN; EFFICIENCY; IMPROVEMENT; REDUCTION; DENSITY;

D O I：

10.1109/LPT.2009.2026728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape-patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.

引用

页码：1366 / 1368

页数：3

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