Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications

被引：55

作者：

Ives, Nathan E. ^{[1
]}

Chen, Jin ^{[1
]}

Witulski, Arthur F. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Bruce, Ralph W. ^{[1
]}

McCurdy, Michael W. ^{[1
]}

Zhang, En Xia ^{[1
]}

Massengill, Lloyd W. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

Gallium nitride; HEMT; power semiconductor devices; proton; radiation effects; RF; S-parameters; ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN HEMTS; GAN HEMTS; DEGRADATION; PERFORMANCE; DEFECTS; DEVICES; DC;

D O I：

10.1109/TNS.2015.2499160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output power are presented. The results are explained based on the device-level degradation. Commercial-off-the-shelf GaN HEMTs from two manufacturers were compared. Differences are observed in both device and circuit level responses. Suggestions to mitigate the negative effects of displacement damage on GaN based amplifiers are also provided.

引用

页码：2417 / 2422

页数：6

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