Size-dependent oxidation behavior for the anomalous initial thermal oxidation process of Si

被引：8

作者：

Cui, H. ^{[1
]}

Sun, Y. ^{[1
]}

Yang, G. Z. ^{[1
]}

Yang, G. W. ^{[1
]}

Wang, C. X. ^{[1
]}

机构：

[1] Zhongshan Univ, Sch Phys Sci & Engn, Inst Optoelect & Funct Composite Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

关键词：

diffusion; elemental semiconductors; oxidation; silicon; size effect; surface chemistry; GROWTH-RATE ENHANCEMENT; SILICON OXIDATION; THIN REGIME; DRY OXYGEN; OXIDE; DIFFUSION; INTERFACE; THERMODYNAMICS; 1ST-PRINCIPLES; MECHANISMS;

D O I：

10.1063/1.3089794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To have a clear insight into the physical origin of the anomalous initial oxidation behavior for silicon oxidation, we proposed a kinetics model by introducing the nanosize effect into the oxidation process. The rate equation of oxide growth was calculated based on our model, and these results are in excellent agreement with experiments. Notably, the present model not only bridges the breakdown of Deal-Grove model [B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965)] in the anomalous initial region but also accurately describes the oxidation process in the whole oxidation regions over a wide temperature range.

引用

页数：3

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