Opto-electrical properties of Sb-doped p-type ZnO nanowires

被引：24

作者：

Kao, Tzu-Hsuan ^{[1
]}

Chen, Jui-Yuan ^{[1
]}

Chiu, Chung-Hua ^{[1
]}

Huang, Chun-Wei ^{[1
]}

Wu, Wen-Wei ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

关键词：

PULSED-LASER DEPOSITION; THERMAL EVAPORATION; HYDROTHERMAL METHOD; OPTICAL-PROPERTIES; ARRAYS; PHOTOLUMINESCENCE; TRANSISTORS; BOUNDARIES; CATALYST; GROWTH;

D O I：

10.1063/1.4869355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited similar to 2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices. (C) 2014 AIP Publishing LLC.

引用

页数：5

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