22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability

被引:0
作者
Bossu, G. [1 ]
Syed, S. [2 ]
Evseev, S. [1 ]
Jerome, J. A. S. [2 ]
Arfaoui, W. [1 ]
Lipp, D. [1 ]
Siddabathula, M. [1 ]
机构
[1] GlobalFoundries Dresden, Dresden, Germany
[2] Globalfoundries US Inc, Santa Clara, CA USA
来源
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2022年
关键词
RF; reliability; mmWave; 5G; FDSOI; PA; CW; VSWR; Power Amplifier; testing;
D O I
10.1109/IRPS48227.2022.9764418
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Power Amplifier (PA) is a key component for embedded RF/mmWave on advanced CMOS technologies on the way to replace the III/V technologies. PA reliability has been a long-standing blocker for those applications. In this paper, a novel methodology is introduced based on an automated waveform analysis tool. Simulation aging results are compared with experimental silicon validation stress for a 28GHz high gain RF Power Amplifier (PA) and confirmed. Waveform analysis tool enables a deeper understanding of both continuous waveform (CW) with constant load and ruggedness test, as well as a new perspective about RF/mmWave circuit aging.
引用
收藏
页数:5
相关论文
共 11 条
[1]   A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology [J].
Arfaoui, W. ;
Bossu, G. ;
Muhlhoff, A. ;
Lipp, D. ;
Manuwald, R. ;
Chen, T. ;
Nigam, T. ;
Siddabathula, M. .
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
[2]  
Chen T., 2019, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), P27
[3]   High-Power Generation for mm-Wave 5G Power Amplifiers in Deep Submicrometer Planar and FinFET Bulk CMOS [J].
Daneshgar, Saeid ;
Dasgupta, Kaushik ;
Thakkar, Chintan ;
Chakrabarti, Anandaroop ;
Levy, Cooper S. ;
Jaussi, James E. ;
Casper, Bryan .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (06) :2041-2056
[4]  
Loescher D, 2016, IEEE TOP CONF POWER, P49, DOI 10.1109/PAWR.2016.7440161
[5]   Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses [J].
Negre, Laurent ;
Roy, David ;
Cacho, Florian ;
Scheer, Patrick ;
Jan, Sebastien ;
Boret, Samuel ;
Gloria, Daniel ;
Ghibaudo, Gerard .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (05) :1075-1083
[6]   Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA [J].
Pazos, Sebastian ;
Aguirre, Fernando ;
Palumbo, Felix ;
Silveira, Fernando .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2020, 20 (01) :33-41
[7]   Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process [J].
Quemerais, Thomas ;
Moquillon, Laurence ;
Fournier, Jean-Michel ;
Benech, Philippe ;
Huard, Vincent .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (04) :1079-1085
[8]  
Spectre<(R), 2020, UN REL INT REF
[9]   A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications [J].
Srinivasan, P. ;
Colestock, P. ;
Samuels, T. ;
Moss, S. ;
Guarin, F. ;
Min, B. .
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
[10]  
Syed S, 2020, IEEE MTT S INT MICR, P1003, DOI 10.1109/IMS30576.2020.9223861