Linear Kondo conductance in a quantum dot

被引:4
|
作者
Giuliano, D
Naddeo, A
Tagliacozzo, A
机构
[1] Univ Calabria, Dipartimento Fis, I-87036 Cosenza, Italy
[2] Coherentia INFM, Unita Napoli, Naples, Italy
[3] Univ Naples Federico II, Dipartimento Sci Fis, I-80126 Naples, Italy
关键词
D O I
10.1088/0953-8984/16/17/003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In a tunnelling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the transparency of the barriers and the temperature. Gate voltages allow for changes of the relative position of the dot addition energies and the Fermi level of the leads. Here we discuss the two limiting cases: weak and strong coupling in the tunnelling Hamiltonian. In the latter case Kondo resonant conductance can emerge at low temperature in a Coulomb blockade valley. We give a pedagogical approach to the single-channel Kondo physics at equilibrium and review the Nozieres scattering picture of the correlated fixed point. We emphasize the effect of an applied magnetic field and show how an orbital Kondo effect can take place in vertical quantum dots tuned both to an even and to an odd number of electrons at a level crossing. We extend the approach to the two-channel overscreened Kondo case and discuss recent proposals for detecting the non-Fermi liquid fixed point which could be reached at strong coupling.
引用
收藏
页码:S1453 / S1483
页数:31
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