Electrochemical Liquid Phase Epitaxy (ec-LPE): A New Methodology for the Synthesis of Crystalline Group IV Semiconductor Epifilms

被引:15
作者
Demuth, Joshua [1 ]
Fahrenkrug, Eli [1 ]
Ma, Luyao [1 ]
Shodiya, Titilayo [1 ]
Deitz, Julia I. [2 ]
Grassman, Tyler J. [2 ]
Maldonado, Stephen [1 ,3 ]
机构
[1] Univ Michigan, Dept Chem, Ann Arbor, MI 48109 USA
[2] Ohio State Univ, Mat Sci & Engn, Columbus, OH 43210 USA
[3] Univ Michigan, Appl Phys Program, Ann Arbor, MI 48109 USA
关键词
GE FILMS; SILICON; GROWTH; SI; GERMANIUM; ELECTRODEPOSITION; DIFFUSION; DEPOSITION; HYDROGEN; DENSITY;
D O I
10.1021/jacs.7b01968
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved over large areas with aqueous feedstock solutions using electrochemical liquid phase epitaxy (ec-LPE) at low temperatures (T <= 90 degrees C). The ec-LPE method uniquely blends the simplicity and control of traditional electrodeposition with the material quality of melt growth. A new electrochemical cell design based on the compression of a liquid metal electrode into a thin cavity that enables ec-LPE is described: The epitaxial nature, low strain character, and crystallographic defect content of the resultant solid Ge films were analyzed by electron backscatter diffraction, scanning transmission electron microscopy, high resolution X-ray diffraction, and electron channeling contrast imaging. The results here show the first step toward a manufacturing infrastructure for traditional crystalline inorganic semiconductor epifilms that does not require high temperature, gaseous precursors, or complex apparatus.
引用
收藏
页码:6960 / 6968
页数:9
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