SiSMA: A statistical simulator for mismatch analysis of MOS ICs

被引：2

作者：

Biagetti, G ^{[1
]}

Orcioni, S ^{[1
]}

Signoracci, L ^{[1
]}

Turchetti, C ^{[1
]}

Crippa, P ^{[1
]}

Alessandrini, M ^{[1
]}

机构：

[1] Univ Ancona, Dipartimento Elettron & Automat, I-60131 Ancona, Italy

来源：

IEEE/ACM INTERNATIONAL CONFERENCE ON CAD-02, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

device mismatch; stochastic simulation; MNA; MOS ICs; non-Montecarlo analysis;

D O I：

10.1109/ICCAD.2002.1167577

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy.

引用

页码：490 / 496

页数：7

共 12 条

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