Effective masses and valence-band splittings in GaN and AlN

被引：217

作者：

Kim, K ^{[1
]}

Lambrecht, WRL ^{[1
]}

Segall, B ^{[1
]}

vanSchilfgaarde, M ^{[1
]}

机构：

[1] SRI INT, MENLO PK, CA 94025 USA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.56.7363

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Full-potential (FP) linearized muffin-tin orbital (LMTO) calculations within the local density approximation are used to determine the conduction and valence-baud effective mass tensors and the related Rashba-Sheka-Pikus and Kohn-Luttinger Hamiltonian parameters for wurtzite and zinc-blende GaN and ALN. Spin-orbit coupling effects are obtained from atomic-sphere approximation (ASA) LMTO calculations. The c-axis uniaxial strain dependence of the crystal field splitting is determined and the combined results are used to interpret experimental data on the strain dependence of exciton splittings in GaN. Corrections beyond the local density approximation on the effective masses and crystal-field splittings as well as the accuracy of the quasicubic model are discussed.

引用

页码：7363 / 7375

页数：13

共 58 条

[11] DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN [J].

DRECHSLER, M ;

HOFMANN, DM ;

MEYER, BK ;

DETCHPROHM, T ;

AMANO, H ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1178-L1179

[12]

DUPUIS RD, 1996, MRS S P, V395

[13]

Eckey L, 1996, INST PHYS CONF SER, V142, P943

[14] Variation of GaN valence bands with biaxial stress and quantification of residual stress [J].

Edwards, NV ;

Yoo, SD ;

Bremser, MD ;

Weeks, TW ;

Nam, OH ;

Davis, RF ;

Liu, H ;

Stall, RA ;

Horton, MN ;

Perkins, NR ;

Kuech, TF ;

Aspnes, DE .

APPLIED PHYSICS LETTERS, 1997, 70 (15) :2001-2003

[15]

EDWARDS NV, 1996, GALLIUM NITRIDE RELA

[16] CONDUCTION-ELECTRON SPIN-RESONANCE IN ZINCBLENDE GAN THIN-FILMS [J].

FANCIULLI, M ;

LEI, T ;

MOUSTAKAS, TD .

PHYSICAL REVIEW B, 1993, 48 (20) :15144-15147

[17] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[18] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].

HEDIN, L ;

LUNDQVIS.BI .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&

[19]

Hedin L., 1969, Solid State Physics, Advanced in Research and Applications, V23, DOI DOI 10.1016/S0081-1947(08)60615-3

[20] INHOMOGENEOUS ELECTRON-GAS [J].

RAJAGOPAL, AK ;

CALLAWAY, J .

PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919

← 1 2 3 4 5 6 →