Synthesis and Optical Properties of Vertically Aligned ZnO Nanorods

被引：15

作者：

Tang, B. ^{[1
]}

Deng, H. ^{[2
]}

Shui, Z. W. ^{[1
]}

Zhang, Q. ^{[1
]}

机构：

[1] SW Petr Univ, Sch Sci, Chengdu 610500, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 03期

关键词：

ZnO Nanorods; Epitaxial Relations; Photoluminescence; Exciton; EPITAXIAL-GROWTH; FIELD-EMISSION; NANOWIRES;

D O I：

10.1166/jnn.2010.2113

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

ZnO nanorods were grown on an n-type silicon (111) substrate with the assistance of Au catalyst by chemical vapor deposition (CVD). The ZnO nanorods were about 200 nm diameter with uniform lengths of about 1.2 mu m. The ZnO nanorods exhibited [0001] orientation. ZnO nanorods grow in dense arrays perpendicular to the (111)-plane of silicon due to [0001](ZnO) parallel to [111](Si), [2 (1) over bar(1) over bar parallel to [1 (1) over bar0](Si), [(1) over bar2 (1) over bar0](ZnO) parallel to [(1) over bar 01](Si) and [(1) over bar(1) over bar 20](ZnO) parallel to [01 (1) over bar](Si) epitaxy. Room-temperature photoluminescence (PL) measurements show three near band-edge emission peak at 377, 379, 389 rim. These peaks are attributed to exciton transitions. Analysis indicates that the band gap of ZnO nanorods is 3.301 eV and exciton binding energy is 0.114 eV.

引用

页码：1842 / 1845

页数：4

共 20 条

[1] Optically pumped lasing of ZnO at room temperature [J].