Mid-infrared broadband absorber of full semiconductor epi-layers

被引：18

作者：

Wang, Shaohua ^{[1
,2
,3
]}

Wang, Yufei ^{[2
,3
]}

Zhang, Siriguleng ^{[1
,2
,3
]}

Zheng, Wanhua ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, 35A Qinghua East Rd, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, 35A Qinghua East Rd, Beijing 100083, Peoples R China

[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, 19A Yuquan Rd, Beijing 100049, Peoples R China

来源：

PHYSICS LETTERS A | 2017年 / 381卷 / 16期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Absorption; Semiconductor materials; Plasmonics; PERFECT ABSORBER; METAMATERIAL ABSORBER; LIGHT-ABSORPTION; TERAHERTZ;

D O I：

10.1016/j.physleta.2017.02.021

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate mid-infrared dual channel near-perfect absorbers based on full semiconductor epilayers theoretically. Strong absorption (>99.9%) is observed at 25.04 THz. Through introducing composite grating and controlling the thickness of the dielectric layer, we can get a broadband absorption with absorptivity above 80% at the range from 8 pm to 12 pm with a good incidence angle tolerance. The structure investigated in this paper shows a broadband, all-semiconductor, plasmonic architecture, which is of great importance for many applications such as bolometers, cloaking, imaging devices and also can be used in enhancing interaction of mid-infrared radiation with integrated semiconductor optoelectronic elements. 2017 Elsevier B.V. All rights reserved.

引用

页码：1439 / 1444

页数：6

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