SYNTHESIS OF Ti-Si AND Ti-Si-N COATINGS BY CONDENSATION OF FILTERED VACUUM-ARC PLASMA

被引：0

作者：

Aksyonov, D. S. ^{[1
]}

Aksenov, I. I. ^{[1
]}

Luchaninov, A. A. ^{[1
]}

Reshetnyak, E. N. ^{[1
]}

Strel'nitskij, V. E. ^{[1
]}

机构：

[1] Kharkov Phys & Technol Inst, Natl Sci Ctr, UA-310108 Kharkov, Ukraine

来源：

PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2009年 / 06期

关键词：

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

Synthesis of Ti-Si and Ti-Si-N coatings using a filtered vacuum-arc plasma source with consumable titanium-silicon cathode was investigated. The thickness of films and their elemental composition were defined by means of the X-ray fluorescent analysis. It has been established, that the silicon concentration in coating can be changed over a wide range, from zero to the maximum value defined by silicon content in the cathode, by adjustment deposition process parameters - working gas pressure, substrate negative bias voltage, magnetic field intensity and its spatial distribution.

引用

页码：268 / 272

页数：5