Material and device properties of Cu(In,Ga)Se2 absorber films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor

被引：28
作者：
Dejene, F. B. [1 ]
机构：
[1] Univ Free State, Dept Phys, ZA-9866 Phuthaditjhaba, South Africa
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
Two-step process; Selenization; Single-phase; Chalcopyrite; Crystalline and composition; CUINSE2; MECHANISMS; DIFFUSION;
D O I：
10.1016/j.cap.2009.04.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The aim of this work was to study the influence of selenization temperature on the morphological and structural properties of Culn(1-x)Ga(x)Se(2) (CIGS) polycrystalline thin films prepared by a two-step method. The compound and metallic precursors were deposited sequentially using GaSe, InSe and Cu sources by thermal evaporation. These identical InSe/Cu/GaSe precursors are then selenized with Se vapor in a vacuum system. All the CIGS films showed chalcopyrite structure and presence of secondary phases observed at low temperatures. High temperature treatment led to better crystalline and an increase in grain size. Solar cell devices are fabricated and J-V measurements performed under AM 1.5 global solar spectra conditions at 25 degrees C are presented. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：36 / 40
页数：5
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