Photoluminescence Study on Ion Implanted Silicon after Rapid Thermal Annealing

被引：13

作者：

Takashima, Shuhei ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

Yoo, Woo Sik ^{[2
]}

机构：

[1] Kyoto Inst Technol, Sakyo Ku, Kyoto 6068585, Japan

[2] WaferMasters Inc, San Jose, CA 95112 USA

来源：

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2009年 / 19卷 / 01期

关键词：

D O I：

10.1149/1.3118940

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The recrystallization process for ion implanted Si was characterized by photoluminescence (PL) at room temperature. By comparing the results of PL, four-point probe measurements, and current-voltage measurements of shallow pn junctions, we found PL a sensitive indicator, as intensity increased with even small decreases in sheet resistance of less than 10 ohm/sq. PL intensity also increased as ideality factor n and leakage current (of shallow p-n junctions) decreased. These results indicate a strong correlation between PL intensity and dopant activation. PL measurement is non-contact and non-destructive and can be used as an in-line monitor for dopant activation and crystalline damage recovery.

引用

页码：147 / +

页数：2