Occurrence of intersubband polaronic repellons in a two-dimensional electron gas

被引:13
作者
Butscher, Stefan [1 ]
Knorr, Andreas [1 ]
机构
[1] Tech Univ Berlin, Inst Theoret Phys Nonlinear Opt & Quantum Elect, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevLett.97.197401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Counteracting electron-phonon and electron-electron interaction in the optical absorption spectra of a quantum well intersubband system can have a significant impact on the line shape and line width of optical transitions at low temperatures. In particular, polaronic repellons can be formed due to an attractive intersubband polaron-polaron interaction. At low temperatures and for properly chosen densities; this effect can lead to a line broadening of the intersubband transition, even in a weak coupling regime.
引用
收藏
页数:4
相关论文
共 20 条
[1]   BIPOLARONS [J].
ALEXANDROV, AS ;
MOTT, NF .
REPORTS ON PROGRESS IN PHYSICS, 1994, 57 (12) :1197-1288
[2]   LINESHAPE OF INTER-SUBBAND OPTICAL-TRANSITIONS IN SPACE-CHARGE LAYERS [J].
ANDO, T .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (01) :33-39
[3]  
[Anonymous], THEORY TRANSPORT PRO
[4]   Self-consistent theory of the gain linewidth for quantum-cascade lasers [J].
Banit, F ;
Lee, SC ;
Knorr, A ;
Wacker, A .
APPLIED PHYSICS LETTERS, 2005, 86 (04) :041108-1
[5]   Polaron signatures in the line shape of semiconductor intersubband transitions:: quantum kinetics of the electron-phonon interaction [J].
Butscher, S ;
Förstner, J ;
Waldmüller, I ;
Knorr, A .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (11) :R49-R51
[6]  
Devreese J. T., 1996, ENCY APPL PHYS, V14, P383, DOI DOI 10.1002/3527600434.EAP347
[7]   Pairing theory of polarons in real and momentum space [J].
Dzhumanov, S ;
Baratov, AA ;
Abboudy, S .
PHYSICAL REVIEW B, 1996, 54 (18) :13121-13128
[8]  
Elsaesser T, 1999, PHYS REP, V321, P254
[9]  
Haug H., 2004, QUANTUM THEORY OPTIC
[10]   Microscopic theory of quantum-cascade lasers [J].
Iotti, RC ;
Rossi, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) :S323-S326