Low dark current III-V on silicon photodiodes by heteroepitaxy

被引：36
作者：
Sun, Keye [1 ]
Jung, Daehwan [2 ]
Shang, Chen [3 ]
Liu, Alan [3 ]
Morgan, Jesse [1 ]
Zang, Jizhao [1 ]
Li, Qinglong [1 ]
Klamkin, Jonathan [2 ]
Bowers, John E. [2 ,3 ]
Beling, Andreas [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22903 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
来源：
OPTICS EXPRESS | 2018年 / 26卷 / 10期
关键词：
PHOTODETECTORS;
D O I：
10.1364/OE.26.013605
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-mu m diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm(2). The responsivity, 3-dB bandwidth, output power and third-order output intercept point (OIP3) were 0.79 A/W, 9 GHz, 2.6 dBm and 15 dBm, respectively. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：13605 / 13613
页数：9
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