A 2-d analytical solution for SCEs in DG MOSFETs

被引：239

作者：

Liang, XP ^{[1
]}

Taur, Y ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 09期

关键词：

MOSFETs; short-channel effect (SCE); threshold voltage roll-off;

D O I：

10.1109/TED.2004.832707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional (2-D) analytical solution of electrostatic potential is derived for undoped (or lightly doped) double-gate (DG) MOSFETs in the subthreshold region by solving Poissons equation in a 2-D boundary value problem. It is shown that the subthreshold current, short-channel threshold voltage rolloff and subthreshold slope predicted by the analytical solution are in close agreement with 2-D numerical simulation results for both symmetric and asymmetric DG MOSFETs without the need of any fitting parameters. The analytical model not only provides useful physics insight into short-channel effects, but also serves as basis for compact modeling of DG MOSFETs.

引用

页码：1385 / 1391

页数：7

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