Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

被引：19

作者：

Kim, Y. S. ^{[2
]}

Lee, J. H. ^{[2
]}

Lim, J. T. ^{[2
]}

Park, J. B. ^{[1
]}

Yeom, G. Y. ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, SKK Adv Inst Nano Technol, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 14期

关键词：

Atmospheric pressure; Deposition; Silicon dioxide; Hexamethyldisilazane (HMDS); PLASMA DEPOSITION;

D O I：

10.1016/j.tsf.2009.01.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiO2-like thin films were deposited at a low temperature (< 50 degrees C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O-2/He/Ar. The film characteristics were investigated according to the HMDS and O-2 flow rates. To obtain a more SiO2-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH3)(x) bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO2-like thin film was also the lowest. By using HMDS (50 sccm) and O-2 (500 sccm) flow rates in the gas mixture of HMDS/O-2/He (2 slm)/Ar (600 sccm), SiO2-like thin films with a low impurity (<6.35%C) were obtained at a deposition rate of approximately 10.7 nm/min. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4065 / 4069

页数：5

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