Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

被引：19

作者：

Kim, Y. S. ^{[2
]}

Lee, J. H. ^{[2
]}

Lim, J. T. ^{[2
]}

Park, J. B. ^{[1
]}

Yeom, G. Y. ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, SKK Adv Inst Nano Technol, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 14期

关键词：

Atmospheric pressure; Deposition; Silicon dioxide; Hexamethyldisilazane (HMDS); PLASMA DEPOSITION;

D O I：

10.1016/j.tsf.2009.01.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiO2-like thin films were deposited at a low temperature (< 50 degrees C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O-2/He/Ar. The film characteristics were investigated according to the HMDS and O-2 flow rates. To obtain a more SiO2-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH3)(x) bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO2-like thin film was also the lowest. By using HMDS (50 sccm) and O-2 (500 sccm) flow rates in the gas mixture of HMDS/O-2/He (2 slm)/Ar (600 sccm), SiO2-like thin films with a low impurity (<6.35%C) were obtained at a deposition rate of approximately 10.7 nm/min. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4065 / 4069

页数：5

共 19 条

[1] Remote AP-PECVD of silicon dioxide films from hexamethyldisiloxane (HMDSO) [J].

Alexandrov, SE ;

McSporran, N ;

Hitchman, ML .

CHEMICAL VAPOR DEPOSITION, 2005, 11 (11-12) :481-490

[2]

[Anonymous], 1999, HDB CHEM VAPOR DEPOS

[3] SiO2-like film deposition by dielectric barrier discharge plasma gun at ambient temperature under an atmospheric pressure [J].

Chen, Qiang ;

Zhang, Yuefei ;

Han, Erli ;

Ge, Yuanjing .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (06) :2082-2086

[4] Chemical vapour deposition of coatings [J].

Choy, KL .

PROGRESS IN MATERIALS SCIENCE, 2003, 48 (02) :57-170

[5] PROPERTIES OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED DIELECTRIC FILMS FROM HEXAMETHYLDISILAZANE [J].

FREEMAN, D ;

KERN, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1446-1450

[6] Preparation and characterization of organic-inorganic hybrids and coating films from 3-methacryloxypropylpolysilsesquioxane [J].

Gunji, T ;

Makabe, Y ;

Takamura, N ;

Abe, Y .

APPLIED ORGANOMETALLIC CHEMISTRY, 2001, 15 (08) :683-692

[7] Characteristics of SiO2-like thin film deposited by atmospheric-pressure PECVD using HMDS/O2/Ar [J].

Lee, J. H. ;

Pham, Thuy. T. T. ;

Kim, Y. S. ;

Lim, J. T. ;

Kyung, S. J. ;

Yeom, G. Y. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (03) :D163-D166

[8] The effect of N2 flow rate in He/O2/N2 on the characteristics of large area pin-to-plate dielectric barrier discharge [J].

Lee, YH ;

Kyung, SJ ;

Jeong, CH ;

Yeom, GY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L78-L81

[9] Atmospheric pressure plasma deposition of thin films by Townsend dielectric barrier discharge [J].

Massines, F ;

Gherardi, N ;

Fornelli, A ;

Martin, S .

SURFACE & COATINGS TECHNOLOGY, 2005, 200 (5-6) :1855-1861

[10] Remote plasma deposited silicon dioxide-like film densification by means of RF substrate biasing: Film chemistry and morphology [J].

Milella, Antonella ;

Creatore, Mariadriana ;

Blauw, Michiel A. ;

De Sanden, Marius C. M. van .

PLASMA PROCESSES AND POLYMERS, 2007, 4 (06) :621-628

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