Influence of Scaling and Emitter Layout on the Thermal Behavior of Toward-THz SiGe:C HBTs

被引：28

作者：

d'Alessandro, Vincenzo ^{[1
]}

Sasso, Grazia ^{[1
]}

Rinaldi, Niccolo ^{[1
]}

Aufinger, Klaus ^{[2
]}

机构：

[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy

[2] Infineon Technol AG, D-85579 Neubiberg, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 10期

关键词：

Heterojunction bipolar transistor (HBT); scaling; self-heating (SH); silicon germanium; thermal resistance; BIPOLAR-TRANSISTORS; RESISTANCE; BICMOS;

D O I：

10.1109/TED.2014.2349792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extensive on-wafer experimental campaign is carried out to determine the thermal resistance dependence on scaling and emitter geometry in state-of-the-art toward-THz silicon-germanium bipolar transistors designed and fabricated within the framework of the European DOTFIVE project. The extraction is performed through a robust procedure which-differently from classic approaches-exploits an accurately calibrated thermometer relating base-emitter voltage to junction temperature. Experimental data are then used to assess the accuracy of scalable thermal resistance laws for advanced transistor models; it was found that at least four parameters are needed to ensure a favorable agreement over wide ranges of emitter widths and lengths.

引用

页码：3386 / 3394

页数：9

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