Characterisation of an extended cavity violet diode laser

被引：37
|
作者：
Conroy, RS [1 ]
Hewett, JJ [1 ]
Lancaster, GPT [1 ]
Sibbett, W [1 ]
Allen, JW [1 ]
Dholakia, K [1 ]
机构：
[1] Univ St Andrews, Sch Phys & Astron, JF Allen Phys Res Labs, St Andrews KY16 9SS, Fife, Scotland
来源：
OPTICS COMMUNICATIONS | 2000年 / 175卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
extended cavity laser; violet diode laser;
D O I：
10.1016/S0030-4018(99)00742-7
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We describe the construction and characterisation of a GaN violet laser diode in a compact, extended cavity geometry. Up to 3.5 mW of single frequency power at 392 nm is generated which is continuously tuneable over 6 GHz and coarsely tuneable over 2.7 nm. We place an upper limit on the linewidth of 5 MHz. The performance of the violet diode laser is compared to that of visible laser diodes in our extended cavity geometry. Possible spectroscopic applications are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：185 / 188
页数：4
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