Measurement of Seebeck Coefficient and Conductive Behaviors of Bi2Te3-xSex (x=0.15-0.6) Thermoelectric Semiconductors without Harmful Dopants

被引：12

作者：

Fusa, Mei ^{[1
]}

Yamamoto, Naoaki ^{[2
]}

Hasezaki, Kazuhiro ^{[3
]}

机构：

[1] Shimane Univ, Interdisciplinary Grad Sch Sci & Engn, Matsue, Shimane 6908504, Japan

[2] Shimane Univ, Fac Mat Sci, Matsue, Shimane 6908504, Japan

[3] Univ Tokushima, Inst Sci & Technol, Dept Energy Syst, Tokushima 7708506, Japan

来源：

MATERIALS TRANSACTIONS | 2014年 / 55卷 / 06期

关键词：

eco-materials; thermoelectrics; Seebeck coefficient; bismuth telluride selenide; n-type; SINGLE-CRYSTAL;

D O I：

10.2320/matertrans.MB201301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A system for measuring Seebeck coefficient was constructed and applied to Bi2Te3-xSex (x = 0.15-0.6) samples without harmful dopants, prepared by mechanical alloying (MA) followed by hot pressing (HP). The constructed thermal contact method system, using single and multiple AT values, gave Seebeck coefficients of a standard reference material (SRM 3451) at room temperature confirmable as 230 4 and 232 1 nV/K, respectively. X-ray diffraction patterns and differential scanning calorimetry curves showed that the MA HP-sintered samples of Bi2Te3,Sex were single-phase Bi2Te3-xSex-related materials. All the Bi2Te3-xSex samples were n-type semiconductors. The maximum power factor was 1.4 x 10(-3) W m(-1)K(-2) for Bi2Te3-xSex sintered at 623 K. These results indicated that doping with harmful materials of Bi2Te3-xSex Ser compounds prepared by the MA HP process is not necessary for carrier control.

引用

页码：942 / 946

页数：5

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Lu, P. F. ;

Yu, Z. Y. ;

Gao, T. ;

Wu, C. J. ;

Ding, L. ;

Wang, S. M. .

SOLID STATE COMMUNICATIONS, 2013, 155 :34-39

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