Effect of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition

被引：0
|
作者：
Kim, MH [1 ]
Kim, HJ [1 ]
Na, HS [1 ]
Qi, F [1 ]
Yoon, E [1 ]
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Kwanak Ku, Seoul 151742, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199911)176:1<337::AID-PSSA337>3.0.CO;2-I
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in decreased carbon incorporation in Ga-sites. Furthermore, the GaN layer had a smooth surface with Ga polarity, whereas the layer grown without hydrogen addition showed a facetted surface with N polarity.
引用
收藏
页码：337 / 341
页数：5
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