Impact of Carrier Concentration and Carrier Lifetime on MgZnO/CdSeTe/CdTe Solar Cells

被引：49

作者：

Pandey, Ramesh ^{[1
]}

Shimpi, Tushar ^{[2
]}

Munshi, Amit ^{[2
]}

Sites, James R. ^{[1
]}

机构：

[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

[2] Colorado State Univ, Dept Mech Engn, Ft Collins, CO 80523 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2020年 / 10卷 / 06期

关键词：

Doping; II-VI semiconductor materials; Cadmium compounds; Photovoltaic cells; Charge carrier lifetime; Charge carrier density; Semiconductor process modeling; Carrier concentration; CdSeTe; CdTe; interface recombination; MgZnO (MZO); PASSIVATION;

D O I：

10.1109/JPHOTOV.2020.3017741

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The performance impact of multiple parameters related to the use of MgZnO (MZO) as the emitter for bilayer CdSeTe/CdTe solar cells has been investigated in detail through numerical simulations. Such a comprehensive study is particularly important, because while cell fabrication using MZO has been highly successful in some cases, it has been less so in others, and it has not been clear which combinations of parameter values are most effective. The parameters considered here include the recombination velocity at the emitter/absorber interface, bulk recombination lifetime, and the carrier concentrations of the emitter and absorber. The ranges chosen for the simulation parameters are those most likely to be found experimentally. The primary finding is that independent of the interfacial recombination velocity and bulk recombination lifetime, the MZO carrier density should be > 10(17) cm(-3) and in any case greater than that of the absorber to reduce interface recombination. At the same time, a shallowdopant the order of 50 meV or less should reduce Shockley-Read-Hall recombination in the bulk and enable VOC > 1 V.

引用

页码：1918 / 1925

页数：8

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