Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperatures

被引:0
作者
Chang, S. C. [1 ]
Wu, Y. S. [1 ]
Chang, N. [2 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Elect Testing Ctr, Taoyuan 33383, Taiwan
来源
SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS | 2012年 / 50卷 / 07期
关键词
SOLAR-CELLS; GAAS; SI;
D O I
10.1149/05007.0109ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. It was observed that when bonding temperature increased from 600 to 800 degrees C, the thickness of oxide layer decreased. Current-voltage characteristic shows typical diode behaviors in these temperature ranges.
引用
收藏
页码:109 / 112
页数:4
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共 7 条
  • [1] High-quality thin film GaAs bonded to Si using SeS2 -: A new approach for high-efficiency tandem solar cells
    Arokiaraj, J
    Okui, H
    Taguchi, H
    Soga, T
    Jimbo, T
    Umeno, M
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 607 - 614
  • [2] Wafer bonding by Ni-induced crystallization of amorphous silicon
    Chao, CP
    Wu, YCS
    Lee, TL
    Wang, YH
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9A): : 5527 - 5530
  • [3] Direct wafer bonded abrupt junction tunnel diodes
    Esser, RH
    Hobart, KD
    Kub, FJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (06) : G387 - G390
  • [4] Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers
    Liu, PC
    Lu, CL
    Wu, YCS
    Cheng, JH
    Ouyang, H
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4831 - 4833
  • [5] Thermal performance of Si and GaAs based solar cells and modules: a review
    Radziemska, E
    [J]. PROGRESS IN ENERGY AND COMBUSTION SCIENCE, 2003, 29 (05) : 407 - 424
  • [6] High-temperature healing of interfacial voids in GaAs wafer bonding
    Wu, YCS
    Liu, PC
    Feigelson, RS
    Route, RK
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 1973 - 1977
  • [7] Improved GaAs bonding process for quasi-phase-matched second harmonic generation
    Wu, YS
    Feigelson, RS
    Route, RK
    Zheng, D
    Gordon, LA
    Fejer, MM
    Byer, RL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (01) : 366 - 371