High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature

被引：16
作者：
Cui, Guodong [1 ]
Han, Dedong [1 ]
Cong, Yingying [1 ]
Dong, Junchen [1 ]
Yu, Wen [1 ]
Zhang, Shengdong [1 ,2 ]
Zhang, Xing [1 ]
Wang, Yi [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 02期
基金：
中国国家自然科学基金;
关键词：
High performance; Ti-Zn-O (TiZO); thin film transistor (TFT); double-layer gate dielectric; THIN-FILM TRANSISTORS;
D O I：
10.1109/LED.2016.2645700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, titanium (Ti)-doped zinc oxide thin film transistors (TiZO TFTs) with a double-layer gate dielectric were successfully fabricated on glass at low temperature. A stacked 7 nm-thick Al2O3/180 nm-thick SiO2 dielectric layer was used to improve the electrical performance of the TFTs, especially their leakage characteristics. Compared with the SiO2 single dielectric, the devices with the double-layer Al2O3/SiO2 dielectric layer showed optimized electrical properties. The saturation mobility (mu(sat)), threshold voltage (v(th)), subthreshold swing (SS), and I-on/I-off ratio obtained were 127 cm(2)V(-1)s(-1), 1.09 V, 131 mV/decade, and 3.7x10(8), respectively. Furthermore, the thickness of Al2O3 in the double-layer gate dielectric was found to have considerable influence on the performance of the TiZO TFTs
引用
收藏
页码：207 / 209
页数：3
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