2D Graphene in Interface Engineering of 3D Graphene-Based Thermal Management

被引:4
作者
Zhao, Menghan [1 ]
Feng, Xiaoqiang [1 ]
Zhu, Wei [1 ]
Guo, Wei [1 ]
Wang, Gang [1 ]
Liu, Zhiduo [2 ]
Guo, Qinglei [3 ,4 ]
Chen, Da [1 ]
机构
[1] Ningbo Univ, Dept Microelect Sci & Engn, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China
[2] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China
[3] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
[4] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 02期
基金
中国国家自然科学基金;
关键词
growth mechanisms; interface layers; plasma-assisted chemical vapor deposition; thermal management; 3D; 2D graphene; GROWTH;
D O I
10.1002/pssa.202000576
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three-dimensional graphene (3D-Gr) has a unique construction and special thermal features, thus providing promising opportunities for application in thermal management devices. Herein, 2D graphene (2D-Gr) is introduced as an interfacial layer in plasma-assisted chemical vapor deposition (PACVD); then, in situ growth of 3D-Gr is achieved on a germanium (Ge) substrate. Systematic experiments are conducted to study and analyze the synthesis mechanism. Finally, the obtained 2D/3D-Gr integrations are developed for the application in high-performance thermal management. By measuring and comparing the thermal heating performance of the pure 3D-Gr device and 2D/3D-Gr device, it is determined that the combination of 3D-Gr with 2D-Gr significantly improves their thermal heating behavior, benefiting from the improved quality of 3D-Gr assisted by the 2D-Gr interfacial layer. The investigations offer an effective strategy for synthesizing high-quality 3D-Gr and 2D/3D-Gr integrations, which pave the way for the development of high-performance thermal management devices.
引用
收藏
页数:7
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