Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation

A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. Thisdevice also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction.