Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation

被引：4

作者：

de Carvalho, Rafaela C. ^{[1
]}

Betts, Anthony J. ^{[1
]}

Cassidy, John F. ^{[1
,2
]}

机构：

[1] Technol Univ Dublin, Appl Electrochem Grp, FOCAS Res Inst, City Campus,Kevin St, Dublin DO8 NF82, Ireland

[2] Technol Univ Dublin, Sch Chem & Pharmaceut Sci, City Campus,Kevin St, Dublin D08 NF82, Ireland

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2019年 / 23卷 / 06期

关键词：

TiO2; Degussa P25; Memristor; Nanoparticles; Point defects; OXIDE FILM; ALUMINUM;

D O I：

10.1007/s10008-019-04239-z

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. Thisdevice also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction.

引用

页码：1939 / 1943

页数：5

共 28 条

[1] Effect of Crystal Imperfections on Reactivity and Photoreactivity of TiO2 (Rutile) with Oxygen, Water, and Bacteria [J].

Bak, Tadeusz ;

Nowotny, Janusz ;

Sucher, Nikolaus J. ;

Wachsman, Eric .

JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (32) :15711-15738

[2]

Boehm H.P., 1966, CHEM IDENTIFICATION, V16,, P179, DOI [10.1016/S0360-0564(08)60354-5., 10.1016/S0360-0564(08)60354-5, DOI 10.1016/S0360-0564(08)60354-5]

[3] Hydration of passive oxide films on aluminum [J].