An X-Band Slow-Wave T/R Switch in 0.25-μm SiGe BiCMOS

被引：11
作者：
Dinc, Tolga [1 ]
Kalyoncu, Ilker [1 ]
Gurbuz, Yasar [2 ]
机构：
[1] Sabanci Univ, TR-34956 Istanbul, Turkey
[2] Sabanci Univ, Fac Engn & Nat Sci, TR-34956 Istanbul, Turkey
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2014年 / 61卷 / 02期
关键词：
Body floating; CMOS integrated circuits; MOSFET switches; SiGe bipolar CMOS; single-pole double-throw switch; transmit/receive (T/R) switch; CMOS; RECEIVER;
D O I：
10.1109/TCSII.2013.2291094
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This brief presents a fully integrated X-band transmit/receive (T/R) switch using slow-wave transmission lines for X-band phased-array radar applications. The T/R switch was fabricated in a 0.25-mu m SiGe bipolar CMOS (BiCMOS) process and occupies 0.73-mm(2) chip area, excluding pads. The switch is based on shunt-shunt topology and employs isolated n-channel (NMOS) transistors and slow-wave microstrip lines. Additionally, resistive body floating and dc biasing are employed to improve the power-handling capability (P-1 (dB)) of the switch. The T/R switch resulted in a measured insertion loss of 2.1-2.9 dB and isolation of 39-42 dB from 8 to 12 GHz. The input referred P-1 dB is 27.6 dBm at 10 GHz. To our knowledge, this brief presents the utilization of slow-wave transmission lines in T/R switches for the first time. Furthermore, it can simultaneously satisfy stringent isolation, insertion loss, and power-handling capability requirements for implementing a fully integrated SiGe T/R module.
引用
收藏
页码：65 / 69
页数：5
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