Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers

被引：0

作者：

Li, Changyi ^{[1
]}

Wright, Jeremy B. ^{[2
]}

Liu, Sheng ^{[2
,3
]}

Lu, Ping ^{[2
]}

Figiel, Jeffrey J. ^{[2
]}

Leung, Benjamin ^{[2
]}

Luk, Ting Shan ^{[2
,3
]}

Brener, Igal ^{[2
,3
]}

Feezell, Daniel ^{[1
]}

Brueck, S. R. J. ^{[1
]}

Wang, George T. ^{[2
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard St SE, Albuquerque, NM 87106 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA

来源：

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lasing is demonstrated from nonpolar III-nitride core-shell multi-quantum-well nanowires. The nanowire lasers were fabricated by coupling a top-down and bottom-up methodology and achieved lasing at wavelengths below the GaN bandedge.

引用

页数：2

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