Modeling of Graphene Nanoribbon Tunnel Field Effect Transistor in Verilog-A for Digital Circuit Design

被引：0
|
作者：
Fahad, Md [1 ]
Zhao, Zhou [1 ]
Srivastava, Ashok [1 ]
Peng, Lu [1 ]
机构：
[1] Louisiana State Univ, Div Elect & Comp Engn, Baton Rouge, LA 70803 USA
来源：
PROCEEDINGS OF 2016 IEEE INTERNATIONAL SYMPOSIUM ON NANOELECTRONIC AND INFORMATION SYSTEMS (INIS) | 2016年
基金：
美国国家科学基金会;
关键词：
Graphene nanoribbon; GNR tunnel FET; GNR tunnel FET inverter; Verilog-A based simulation;
D O I：
10.1109/iNIS.2016.60
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Performance of graphene nanoribbon (GNR) tunnel field effect transistor (TFET) has been modeled in Verilog-Analog (Verilog-A) using previously reported physics based compact analytical current transport model. Performance obtained using both analytical model and Verilog-A simulations are compared providing excellent match. Using n-type and p-type GNR TFETs, inverter circuit is designed and simulated in Mentor Graphics (R) Tanner EDA S-Edit and T-Spice utilizing the developed Verilog-A codes. With suitable choice of supply voltage, our Verilog-A simulated GNR TFET inverter provides low propagation delay, low power dissipation and retains strong signal integrity.
引用
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页码：1 / 5
页数：5
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