Band profiles of ZnMgO/ZnO heterostructures confirmed by Kelvin probe force microscopy

被引:36
作者
Tampo, H. [1 ]
Shibata, H. [1 ]
Maejima, K. [1 ]
Chiu, T. -W. [1 ]
Itoh, H. [1 ]
Yamada, A. [1 ]
Matsubara, K. [1 ]
Fons, P. [1 ]
Chiba, Y. [2 ]
Wakamatsu, T. [2 ]
Takeshita, Y. [2 ]
Kanie, H. [2 ]
Niki, S. [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Tokyo Univ Sci, Chiba 2788510, Japan
关键词
atomic force microscopy; II-VI semiconductors; magnesium compounds; Poisson equation; Schrodinger equation; semiconductor heterojunctions; surface states; two-dimensional electron gas; zinc compounds; WORK FUNCTION; ZNO;
D O I
10.1063/1.3157149
中图分类号
O59 [应用物理学];
学科分类号
摘要
The band profiles of ZnMgO/ZnO heterostructures were confirmed through surface potential measurements by Kelvin probe force microscopy. A simple model for the band profile was proposed and the various band parameters were evaluated experimentally and theoretically based on the band model. The band profile was calculated and validated with experimental results using the Schroumldinger-Poisson equation. The energy level of the ZnMgO surface donor state, which serves as the source of the two-dimensional electron gas in ZnMgO/ZnO heterostructures, was estimated from the band parameters; nearly identical energy levels around 0.8 eV were obtained for Zn(1-x)Mg(x)O layers with Mg compositions x ranging from 0.12 to 0.42 and the corresponding charge densities were estimated to be 8x10(12) cm(-2).
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页数:3
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共 19 条
[1]   High field electron transport properties of bulk ZnO [J].
Albrecht, JD ;
Ruden, PP ;
Limpijumnong, S ;
Lambrecht, WRL ;
Brennan, KF .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :6864-6867
[2]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[3]  
DAVIES JH, 1998, PHYS LOW DIMENSIONAL, P128
[4]   Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors [J].
Ibbetson, JP ;
Fini, PT ;
Ness, KD ;
DenBaars, SP ;
Speck, JS ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 2000, 77 (02) :250-252
[5]  
IBBETSON JP, 2008, SEMICONDUCTOR DEVICE, P388
[6]   Cyclotron resonance in n-type ZnO [J].
Imanaka, Y ;
Oshikiri, M ;
Takehana, K ;
Takamasu, T ;
Kido, G .
PHYSICA B, 2001, 298 (1-4) :211-215
[7]  
JENA D, 2008, POLARIZATION EFFECTS, P164
[8]   Piezoelectric carrier confinement by lattice mismatch at ZnO/Zn0.6Mg0.4O heterointerface [J].
Koike, K ;
Hama, K ;
Nakashima, I ;
Takada, G ;
Ozaki, M ;
Ogata, K ;
Sasa, S ;
Inoue, M ;
Yano, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (10B) :L1372-L1375
[9]   WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J].
MICHAELSON, HB .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4729-4733
[10]   WORK FUNCTION AND BAND BENDING ON CLEAN CLEAVED ZINC-OXIDE SURFACES [J].
MOORMANN, H ;
KOHL, D ;
HEILAND, G .
SURFACE SCIENCE, 1979, 80 (01) :261-264