Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds

被引：0

作者：

Chen, YF ^{[1
]}

Chiu, YS ^{[1
]}

Ya, MH ^{[1
]}

Chen, TT ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10764, Taiwan

来源：

COMPOUND SEMICONDUCTORS 2002 | 2003年 / 174卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anisotropic property of type-II GaAs/GaAsSb heterostructures was studied by photoluminescence (PL) and photoconductivity (PC). It was found that the PL and PC spectra exhibit a strong in-plane polarization with respect to <011> axis with polarization degrees up to 40%. We showed that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells was attributed to the intrinsic property of the orientation of chemical bonds at heterointerfaces.

引用

页码：397 / 400

页数：4

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