In situ measurement of porous silicon and the influence of ambient gas on its properties

被引：10

作者：

Bilenko, DI ^{[1
]}

Belobrovaja, OY ^{[1
]}

Coldobanova, OY ^{[1
]}

Jarkova, EA ^{[1
]}

Khasina, EI ^{[1
]}

Polyanskaya, VP ^{[1
]}

Melnikova, TE ^{[1
]}

Mysenko, IB ^{[1
]}

Smirnov, VV ^{[1
]}

Filippova, GO ^{[1
]}

机构：

[1] Saratov State Univ, Saratov 410600, Russia

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 79卷 / 02期

关键词：

porous silicon; low-dimensional silicon structures; in situ measurement;

D O I：

10.1016/S0924-4247(99)00276-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ measurement of the formation process of low-dimensional porous silicon (PS) structures was developed. The measurements are based on the analysis of polyharmonic time dependence of the reflected radiation. The results show high sensitivity to HPS in PS based structures with catalytic (Pd, Ni) and ohmic (Al) electrodes. In the best samples the appearance of three molecules H2S on 10(9) molecules N-2 increased the electrical current value by a factor of 2-3. The structures selectively measure H2S concentration from 0.02 to 1000 ppm. It was found that unusually high reversible and nonreversible optical properties change because of the influence of gas solvents and alcohol. The exposure of PS layers to ethyalcohol vapor changes the color of PS from bright blue to crimson and the refraction coefficient in the IR region changes up to 0.06. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：147 / 152

页数：6

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