Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

被引：16

作者：

Galiev, G. B. ^{[1
]}

Pushkarev, S. S. ^{[1
]}

Buriakov, A. M. ^{[2
]}

Bilyk, V. R. ^{[2
]}

Mishina, E. D. ^{[2
]}

Klimov, E. A. ^{[1
]}

Vasil'evskii, I. S. ^{[3
]}

Maltsev, P. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

[2] Moscow Technol Univ MIREA, Moscow 119454, Russia

[3] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

来源：

SEMICONDUCTORS | 2017年 / 51卷 / 04期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; PHOTOCONDUCTIVE ANTENNAS; SILICON;

D O I：

10.1134/S1063782617040054

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping delta layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

引用

页码：503 / 508

页数：6

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