CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres

被引：13

作者：

Gonzalez, A. ^{[1
]}

Herrera-Zaldivar, M. ^{[2
]}

Valenzuela, J. ^{[2
]}

Escobedo-Morales, A. ^{[3
]}

Pal, U. ^{[3
]}

机构：

[1] Ctr Invest Cientifica & Educ Super Ensenada, Ensenada 22860, Baja California, Mexico

[2] Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Ensenada 22800, Baja California, Mexico

[3] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Pue, Mexico

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 4-5期

关键词：

ZnO; Cathodoluminescence; Point defects; Indium doping; NATIVE POINT-DEFECTS; LUMINESCENCE PROPERTIES; ZINC-OXIDE; INDIUM; PHOTOLUMINESCENCE; NANOWIRES; GROWTH; FILMS;

D O I：

10.1016/j.spmi.2008.10.036

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The yellow emission of thermally treated undoped and In doped ZnO nanostructures was studied by the cathodoluminescence (CL) technique. CL spectra acquired at room temperature of the as-grown samples revealed two emissions at about 3.2 eV and 2.13 eV, corresponding to the near band edge and defect related emissions, respectively. On annealing the samples at 600 degrees C in Ar and O-2 atmospheres, the defect emission suffers a red shift, irrespective of the annealing atmosphere. This red shift is explained in terms of variations in the relative intensities of the two component bands centered at about 2.24 eV and 1.77 eV, which were clearly resolved in the CL spectra acquired at low temperature of the annealed samples. A decrease of the relative intensity of the yellow emission (2.24 eV) was observed for all thermally annealed samples. The annealing of zinc interstitial point defects is proposed as a possible mechanism to explain this intensity decrease. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：421 / 428

页数：8

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