Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs

被引：0

作者：

Li, Zunchao ^{[1
]}

Zhang, Ruizhi ^{[1
]}

Liang, Feng ^{[1
]}

Yang, Zhiyong ^{[2
]}

机构：

[1] Xi An Jiao Tong Univ, Dept Microelect, Xian 710049, Peoples R China

[2] Xidian Univ, Coll Tech Phys, Xian 710071, Peoples R China

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2009年 / E92C卷 / 04期

基金：

美国国家科学基金会;

关键词：

MOSFET; surrounding-gate; compact model; halo; SHORT-CHANNEL; SOI MOSFETS; SCALING THEORY; MODEL; PERFORMANCE; LENGTH;

D O I：

10.1587/transele.E92.C.558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Halo doping profile is used in nanoscale surrounding-gate MOSFETs to suppress short channel effect and improve current driving capability. Analytical surface potential and threshold voltage models are derived based on the analytical solution of Poisson's equation for the fully depleted symmetric and asymmetric halo-doped MOSFETs. The validity of the analytical models is verified using 3D numerical simulation. The performance of the halo-doped MOSFETs are studied and compared with the uniformly doped surrounding-gate MOSFETs. It is shown that the halo-doped channel can suppress threshold voltage roll-off and drain-induced barrier lowering, and improve carrier transport efficiency. The asymmetric halo structure is better in suppressing hot carrier effect than the symmetric halo structure.

引用

页码：558 / 563

页数：6

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