Electric field control of magnetic properties and electron transport in BaTiO3-based multiferroic heterostructures

被引：16

作者：

Asa, M. ^{[1
]}

Baldrati, L. ^{[1
]}

Rinaldi, C. ^{[1
]}

Bertoli, S. ^{[1
]}

Radaelli, G. ^{[1
]}

Cantoni, M. ^{[1
]}

Bertacco, R. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Fis, Via G Colombo 81, I-20133 Milan, Italy

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2015年 / 27卷 / 50期

关键词：

multiferroic heterostructure; magnetoelectric coupling; tunneling; BaTiO3; antiferromagnetic; interface; magnetotransport; SPIN POLARIZATION; TUNNEL-JUNCTIONS; FERROELECTRIC CONTROL; EXCHANGE BIAS; BARRIERS; SILICON;

D O I：

10.1088/0953-8984/27/50/504004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we report on a purely electric mechanism for achieving the electric control of the interfacial spin polarization and magnetoresistance in multiferroic tunneling junctions. We investigate micrometric devices based on the Co/Fe/BaTiO3/La0.7Sr0.3MnO3 heterostructure, where Co/Fe and La0.7Sr0.3MnO3 are the magnetic electrodes and BaTiO3 acts both as a ferroelectric element and tunneling barrier. We show that, at 20 K, devices with a 2 nm thick BaTiO3 barrier present both tunneling electroresistance (TER = 12 +/- 0.1%) and tunneling magnetoresistance (TMR). The latter depends on the direction of the BaTiO3 polarization, displaying a sizable change of the TMR from -0.32 +/- 0.05% for the polarization pointing towards Fe, to -0.12 +/- 0.05% for the opposite direction. This is consistent with the on-off switching of the Fe magnetization at the Fe/BaTiO3 interface, driven by the BaTiO3 polarization, we have previously demonstrated in x-ray magnetic circular dichroism experiments.

引用

页数：7

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